FDB86135, MOSFETs PWM PFC COMBO
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005537567
- Артикул
- FDB86135
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Material
- Si
Цена по запросу
(от 800,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH Si 100V 176A 3-контактный(2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 54 |
| Особенности | PWM Optimized |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 227000 |
| Typical Gate Charge @ 10V (nC) | 89 |
| Typical Gate Charge @ Vgs (nC) | 89@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 22 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 176 |
| Typical Input Capacitance @ Vds (pF) | 5485@25V |
| Maximum Drain Source Resistance (mOhm) | 3.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |