FDB8447L, Trans MOSFET N-CH Si 40V 15A 3-Pin(2+Tab) D2PAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002306529
- Артикул
- FDB8447L
- Бренд
- ON Semiconductor***
- HTS
- FDB8447L
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 390 ₽)
Минимальный заказ: 210 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 40В 50А 60Вт
Технические параметры
| HTS | FDB8447L |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.67(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Структура | N-Channel |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 6 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 60000 |
| Typical Gate Charge @ 10V (nC) | 37 |
| Typical Gate Charge @ Vgs (nC) | 37@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 250 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 28 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 7 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.9 |
| Typical Gate to Source Charge (nC) | 6 |
| Typical Reverse Recovery Time (ns) | 28 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1970@20V |
| Typical Reverse Recovery Charge (nC) | 24 |
| Maximum Drain Source Resistance (MOhm) | 8.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 100 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 150@20V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 66 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 15 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |