FDB13AN06A0, Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
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- Код товара
- 8002306592
- Артикул
- FDB13AN06A0
- Бренд
- ON Semiconductor***
- Case
- D2PAK
- Type
- Power MOSFET
- Type:
- MOSFET
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 280 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощный полевой транзистор, 62 А, 60 В, 0,0135 Ом, N-канальный, MOSFET, TO-263AB
Технические параметры
| Case | D2PAK |
| Type | Power MOSFET |
| Type: | MOSFET |
| Brand: | onsemi/Fairchild |
| Mounting | Surface Mount |
| Polarity | N |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Fall Time: | 26 ns |
| Rise Time: | 96 ns |
| Technology | PowerTrench® |
| Вес, г | 2.7 |
| Gate charge | 29nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Package Type | D2PAK |
| Polarisation | unipolar |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 62A |
| Manufacturer: | onsemi |
| Package/Case: | SC-70-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhancement |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | FDB13AN06A0_NL |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 115(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Number of Elements | 1 |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 34mΩ |
| Drain-Source On-Volt | 60(V) |
| Drain-source voltage | 60V |
| Operating Temp Range | -55C to 175C |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 800 |
| Особенности | - |
| Pd - Power Dissipation: | 115 W |
| Continuous Drain Current | 10.9(A) |
| Gate-Source Voltage (Max) | '±20(V) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 44 ns |
| Id - Continuous Drain Current: | 62 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 11.5 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 13 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 115 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |