FCX493TA, Trans GP BJT NPN 100V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001011979
- Артикул
- FCX493TA
- Бренд
- DIODES INC.
- Tab
- Tab
- ECCN
- EAR99
- PPAP
- No
- Type
- NPN
Цена по запросу
(от 29 ₽)
Минимальный заказ: 510 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 100V 1A 1000 МВт 4-контактный(3+вкладки) SOT-89 T/R
Технические параметры
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| HTSUS | 8541.29.0075 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | FCX49 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.28 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 1W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Package Type | SOT-89 |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-243AA |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Base Product Number | FCX493 -> |
| Transistor Polarity: | NPN |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT |
| Frequency - Transition | 150MHz |
| Minimum DC Current Gain | 100@1mA@10V|100@250mA@10V|60@500mA@10V|20@1A@10V |
| Pd - Power Dissipation: | 1 W |
| Supplier Device Package | SOT-89-3 |
| Maximum Base Current (A) | 0.3 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1 W |
| Gain Bandwidth Product fT: | 150 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 150 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 1 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 120 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector (Ic) (Max) | 1A |
| Maximum Collector Base Voltage | 120 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -65 C |
| Current - Collector Cutoff (Max) | 100nA |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Collector-Emitter Saturation Voltage: | 600 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 10V |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.15@100mA@1A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@50mA@500mA|0.6@100mA@1A |