FCPF11N60, Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm, TO-220F, Through Hole
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- Код товара
- 8753002593
- Артикул
- FCPF11N60
- Бренд
- ON Semiconductor***
- Case
- TO220FP
- RoHS
- Details
- Type
- MOSFET
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 586 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 650В, 11А, 36Вт, TO220FP Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220FP |
| RoHS | Details |
| Type | MOSFET |
| Brand | ON Semiconductor/Fairchild |
| Type: | MOSFET |
| Width | 4.7 mm |
| Brand: | onsemi/Fairchild |
| Height | 16.3 mm |
| Length | 10.67 mm |
| Series | FCPF11N60 |
| Series: | FCPF11N60 |
| Mounting | THT |
| Fall Time | 56 ns |
| Packaging | Tube |
| Rise Time | 98 ns |
| Fall Time: | 56 ns |
| Packaging: | Tube |
| Rise Time: | 98 ns |
| Technology | Si |
| Вес, г | 2.11 |
| Gate charge | 52nC |
| Technology: | Si |
| Unit Weight | 0.080072 oz |
| Channel Mode | Enhancement |
| Manufacturer | ON Semiconductor |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | TO-220 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 11A |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 36W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Number of Channels | 1 Channel |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±30V |
| Number of Channels: | 1 Channel |
| On-state resistance | 0.38Ω |
| Transistor Polarity | N-Channel |
| Drain-source voltage | 650V |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 50 |
| Pd - Power Dissipation | 36 W |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 36 W |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 34 ns |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-Off Delay Time | 119 ns |
| Typical Turn-On Delay Time: | 34 ns |
| Typical Turn-Off Delay Time: | 119 ns |
| Id - Continuous Drain Current | 11 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 9.7 S |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 9.7 S |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Крутизна характеристики, S | 9.7 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 600 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 36 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±30В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.32 Ом |