FCPF067N65S3, TO-220F-3 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062532497
- Артикул
- FCPF067N65S3
- Бренд
- ON Semiconductor***
- Width
- 4.9mm
- Brand:
- onsemi/Fairchild
- Series:
- FCPF067N65S3
- Pin Count
- 3
Цена по запросу
(от 853,93 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор SuperFET® III - это совершенно новое семейство МОП-транзисторов ON Semiconductor с высоковольтным суперпереxодом (SJ), в котором используется теxнология балансировки заряда, обеспечивающая выдающееся низкое сопротивление на вxоде и более низкую производительность заряда затвора.
Технические параметры
| Width | 4.9mm |
| Brand: | onsemi/Fairchild |
| Series: | FCPF067N65S3 |
| Pin Count | 3 |
| Fall Time: | 16 ns |
| Packaging: | Tube |
| Rise Time: | 52 ns |
| Tradename: | SuperFET III |
| Вес, г | 2.28 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220F |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| REACH - SVHC: | Details |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 78 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation: | 46 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 46 W |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 26 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 89 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 44 A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 29 S |
| Maximum Drain Source Resistance | 67 mΩ |
| Maximum Continuous Drain Current | 44 A |
| Rds On - Drain-Source Resistance: | 67 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |