FCH041N65F-F085, MOSFETs 650V N-Channel SuperFET II MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833273
- Артикул
- FCH041N65F-F085
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 2 300 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
FCH041N65F_F085 НА полупроводниковыx транзистораx MOSFETs N-CH 650V 76A Автомобильный 3-контактный (3 + вкладки) разъем TO-247 - Arrow.com
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.7 mm |
| Package Length | 15.62 mm |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 10 |
| Process Technology | SuperFET II |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 39 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 595000 |
| Typical Gate Charge @ 10V (nC) | 234 |
| Typical Gate Charge @ Vgs (nC) | 234@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 55 |
| Maximum Drain-Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 183 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 76 |
| Typical Input Capacitance @ Vds (pF) | 10200@25V |
| Maximum Drain-Source Resistance (mOhm) | 41@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |