FCD2250N80Z, MOSFETs N-Channel SuperFET II MOSFET 800 V, 2.6 A, 2.25 O
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004833258
- Артикул
- FCD2250N80Z
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series
- SuperFETВ® II
- Series:
- FCD2250N80Z
- FET Type
- N-Channel
Цена по запросу
(от 222,65 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 800V 2.6A с 3-контактным разъемом DPAK T/R - кассета и катушка (артикул: FCD2250N80Z)
Технические параметры
| Brand: | onsemi/Fairchild |
| Series | SuperFETВ® II |
| Series: | FCD2250N80Z |
| FET Type | N-Channel |
| Packaging | Cut Tape(CT) |
| Vgs (Max) | В±20V |
| Fall Time: | 8.7 ns |
| Rise Time: | 6.7 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | SuperFET II |
| Вес, г | 9 |
| FET Feature | - |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Vgs(th) (Max) @ Id | 4.5V @ 260ВµA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.3A, 10V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 39 W |
| Power Dissipation (Max) | 39W(Tc) |
| Supplier Device Package | D-Pak |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 11 ns |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Typical Turn-Off Delay Time: | 26 ns |
| Drain to Source Voltage (Vdss) | 800V |
| Id - Continuous Drain Current: | 2.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 2.28 S |
| Rds On - Drain-Source Resistance: | 2.25 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 100V |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 2.6A(Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 800 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 39 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |