FCB110N65F, MOSFETs Power MOSFET, N-Channel, SUPERFE II, FRFETA®, 650 V, 35 A, 110 mohm, D2-PAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062316608
- Артикул
- FCB110N65F
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Brand:
- onsemi/Fairchild
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 857,38 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 650V 35A 3-контактный(2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant with Exemption |
| Series: | FCB110N65F |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 5.7 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 21 ns |
| Tradename: | SuperFET II FRFET |
| Вес, г | 3.96 |
| PCB changed | 2 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N Channel |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 10 |
| Power Dissipation | 357Вт |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 98 nC |
| Process Technology | SuperFET II |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 5.7 |
| Typical Rise Time (ns) | 21 |
| Pd - Power Dissipation: | 357 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 31 ns |
| Typical Turn-Off Delay Time: | 89 ns |
| Id - Continuous Drain Current: | 35 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 357000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 98 |
| Typical Gate Charge @ Vgs (nC) | 98@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 31 |
| кол-во в упаковке | 27 |
| Drain Source On State Resistance | 0.096Ом |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 89 |
| Rds On - Drain-Source Resistance: | 110 mOhms |
| Линейка Продукции | SuperFET II FRFET |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Maximum Continuous Drain Current (A) | 35 |
| Typical Input Capacitance @ Vds (pF) | 3680@100V |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Maximum Drain Source Resistance (mOhm) | 110@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Непрерывный Ток Стока | 35А |
| Рассеиваемая Мощность | 357Вт |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 5В |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 650В |
| Стиль Корпуса Транзистора | TO-263(D2PAK) |
| Максимальная Рабочая Температура | 150°C |
| Сопротивление во Включенном Состоянии Rds(on) | 0.096Ом |