EM6K6T2R, Транзистор: N-MOSFET x2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070106809
- Артикул
- EM6K6T2R
- Бренд
- Rohm
- Brand
- ROHM Semiconductor
- Series
- EM6K6
- Product
- MOSFET Small Signal
- Fall Time
- 10 ns
Цена по запросу
(от 33,56 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | ROHM Semiconductor |
| Series | EM6K6 |
| Product | MOSFET Small Signal |
| Fall Time | 10 ns |
| Packaging | Cut Tape or Reel |
| Rise Time | 10 ns |
| Technology | Si |
| Вес, г | 0.1 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Manufacturer | ROHM Semiconductor |
| Product Type | MOSFET |
| Configuration | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-563-6 |
| Part # Aliases | EM6K6 |
| Transistor Type | 2 N-Channel MOSFET |
| Product Category | MOSFET |
| Number Of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 8000 |
| Pd - Power Dissipation | 150 mW |
| Vgs - Gate-Source Voltage | 4 V |
| Typical Turn-On Delay Time | 5 ns |
| Typical Turn-Off Delay Time | 15 ns |
| Id - Continuous Drain Current | 300 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 300 mV |