EFC6612R-TF, MOSFETs NCH+NCH 23A 20V 4.4M OHM
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- Код товара
- 8004738343
- Артикул
- EFC6612R-TF
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 92 us, 92 us
- Rise Time:
- 640 ns, 640 ns
- Вес, г
- 1
Цена по запросу
(от 127,79 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 92 us, 92 us |
| Rise Time: | 640 ns, 640 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | CSP-6 |
| Transistor Type: | 2 N-channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 27 nC |
| Country of Origin: | CN |
| Number of Channels: | 2 Channel |
| Country of Assembly: | CN |
| Transistor Polarity: | N-Channel |
| Country of Diffusion: | TW |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation: | 2.5 W |
| Vgs - Gate-Source Voltage: | -12 V, 12 V |
| Typical Turn-On Delay Time: | 30 ns, 30 ns |
| Typical Turn-Off Delay Time: | 11.8 us, 11.8 us |
| Id - Continuous Drain Current: | 23 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.7 S, 4.7 S |
| Rds On - Drain-Source Resistance: | 4.2 mOhms, 4.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |