ECH8667-TL-H, MOSFETs PCH+NCH 4V DRIVE SERIES
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005369064
- Артикул
- ECH8667-TL-H
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor
- Brand:
- onsemi
- Series
- ECH8667
Цена по запросу
(от 110,19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторная матрица MOSFET Dual P-CH 30 В 5,5 А с 8-контактным разъемом ECH T/R - Лента и катушка (Alt: ECH8667-TL-H)
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor |
| Brand: | onsemi |
| Series | ECH8667 |
| Fall Time | 42 ns |
| Packaging | Reel |
| Rise Time | 23 ns |
| Fall Time: | 42 ns |
| Rise Time: | 23 ns |
| Technology | Si |
| Вес, г | 668 |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | ECH-8 |
| Mounting Style: | SMD/SMT |
| Package / Case: | ECH-8 |
| Transistor Type | 2 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 13 nC |
| Transistor Type: | 2 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Number of Channels | 2 Channel |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 1.5 W |
| Особенности | - |
| Pd - Power Dissipation: | 1.5 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 7.2 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 63 ns |
| Typical Turn-On Delay Time: | 7.2 ns |
| Typical Turn-Off Delay Time: | 63 ns |
| Id - Continuous Drain Current | -5.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 5.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance | 58 mOhms |
| Rds On - Drain-Source Resistance: | 58 mOhms |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |