ECH8660-TL-H, 30V 4.5A 59m @10V,2A 1.5W 1 N-Channel + 1 P-Channel SOT-28FL MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048309444
- Артикул
- ECH8660-TL-H
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- ECH8660
- Fall Time:
- 7.5 ns, 35 ns
- Rise Time:
- 11 ns, 26 ns
Цена по запросу
(от 254 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Series: | ECH8660 |
| Fall Time: | 7.5 ns, 35 ns |
| Rise Time: | 11 ns, 26 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | ECH-8 |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.4 nC, 10 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Pd - Power Dissipation: | 1.3 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6.2 ns, 7.5 ns |
| Typical Turn-Off Delay Time: | 17 ns, 45 ns |
| Id - Continuous Drain Current: | 4.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 110 mOhms, 82 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |