DZT2222A-13, 40V 1W 100@150mA,10V 600mA NPN SOT-223 BIpolar TransIstors - BJT

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- Код товара
- 8025170163
- Артикул
- DZT2222A-13
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
Цена по запросу
(от 40 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 40V 0.6A 830 МВт 4-контактный(3+Tab) SOT-223 T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DZT2222 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.24 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Package Type | SOT-223(SC-73) |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Configuration | Single Dual Collector |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Collector Current (Ic) | 600mA |
| Power Dissipation (Pd) | 1W |
| Minimum DC Current Gain | 100 |
| Pd - Power Dissipation: | 1 W |
| DC Current Gain hFE Max: | 300 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1 W |
| Transition Frequency (fT) | 300MHz |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Maximum DC Collector Current | 600 mA |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 75 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 830 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 35 |
| Collector Cut-Off Current (Icbo) | 10nA |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 10 |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@15mA@150mA|2@50mA@500mA |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@15mA@150mA|1@50mA@500mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@500mA, 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |