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DZT2222A-13, 40V 1W 100@150mA,10V 600mA NPN SOT-223 BIpolar TransIstors - BJT

DZT2222A-13, 40V 1W 100@150mA,10V 600mA NPN SOT-223 BIpolar TransIstors - BJT

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Код товара
8025170163
Артикул
DZT2222A-13
Бренд
DIODES INC.
Tab
Tab
PPAP
No
Type
NPN
Brand:
Diodes Incorporated
Цена по запросу
(от 40 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN 40V 0.6A 830 МВт 4-контактный(3+Tab) SOT-223 T/R

Технические параметры

TabTab
PPAPNo
TypeNPN
Brand:Diodes Incorporated
EU RoHSCompliant
Series:DZT2222
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.24
PCB changed3
Part StatusActive
Technology:Si
Package TypeSOT-223(SC-73)
Subcategory:Transistors
КорпусSOT-223
ConfigurationSingle Dual Collector
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-223-4
Transistor TypeNPN
Product CategoryBipolar Power
Supplier PackageSOT-223
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Standard Package NameSOT
Collector Current (Ic)600mA
Power Dissipation (Pd)1W
Minimum DC Current Gain100
Pd - Power Dissipation:1 W
DC Current Gain hFE Max:300
Transistor ConfigurationSingle
Maximum Power Dissipation1 W
Transition Frequency (fT)300MHz
Gain Bandwidth Product fT:300 MHz
Emitter- Base Voltage VEBO:6 V
Maximum Operating Frequency300 MHz
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@150mA, 10V
Maximum DC Collector Current600 mA
Maximum Emitter Base Voltage6 V
Collector- Base Voltage VCBO:75 V
Continuous Collector Current:600 mA
Maximum DC Collector Current:600 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage75 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)830
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:35
Collector Cut-Off Current (Icbo)10nA
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Emitter Voltage40 V
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:40 V
Collector-Emitter Saturation Voltage:1 V
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)10
Collector-Emitter Breakdown Voltage (Vceo)40V
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Factory Pack Quantity: Factory Pack Quantity:2500
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@500mA, 50mA
Максимально допустимый ток к ( Iк макс.А)600

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