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DXTA42-13, Транзистор: NPN

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Код товара
8017551776
Артикул
DXTA42-13
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
DXTA42
Вес, г
0.1
Technology:
Si
Цена по запросу
(от 210 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand:Diodes Incorporated
Series:DXTA42
Вес, г0.1
Technology:Si
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Collector Current (Ic)500mA
Pd - Power Dissipation1W
Power Dissipation (Pd)1W
Pd - Power Dissipation:1 W
Transition Frequency (fT)50MHz
Gain Bandwidth Product fT:50 MHz
Emitter- Base Voltage VEBO:6 V
DC Current Gain (hFE@Ic,Vce)40@30mA, 10V
Maximum DC Collector Current500mA
Collector- Base Voltage VCBO:300 V
Maximum DC Collector Current:500 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:25 at 1 mA, 10 V
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage300V
Collector- Emitter Voltage VCEO Max:300 V
Collector-Emitter Saturation Voltage:500 mV
Collector-Emitter Breakdown Voltage (Vceo)300V
Factory Pack Quantity: Factory Pack Quantity:2500
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@20mA, 2mA

Техническая документация