DXT2222A-13, 10nA 40V 1W 100@150mA,10V 600mA 300MHz 1V@500mA,50mA NPN -55°C~+150°C@(Tj) SOT-89-3 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017602315
- Артикул
- DXT2222A-13
- Бренд
- DIODES INC.
- ECCN
- EAR99
- HTSUS
- 8541.29.0075
- Brand:
- Diodes Incorporated
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 59 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
40 В, 1 Вт, 100 при 150 мА, 10 В, 600 мА на биполярныx транзистораx NPN SOT-89-3 - BJT ROHS
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Brand: | Diodes Incorporated |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Вес, г | 1.85 |
| Power - Max | 1W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Корпус | SOT-89/TO-243 |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-243AA |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Base Product Number | DXT2222 -> |
| Transistor Polarity: | NPN |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 600mA |
| Factory Pack Quantity: | 2500 |
| Frequency - Transition | 300MHz |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 750 mW |
| Supplier Device Package | SOT-89-3 |
| Transition Frequency (fT) | 300MHz |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Collector- Base Voltage VCBO: | 75 V |
| Maximum DC Collector Current: | 800 mA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 600mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 35 at 10 mA, 10 V |
| Collector Cut-Off Current (Icbo) | 10nA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@500mA, 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |
| Граничная частота коэффициента передачи тока fгр.МГц | 300 |