DTC614TUT106, Транзистор: NPN
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- Код товара
- 8014890083
- Артикул
- DTC614TUT106
- Бренд
- Rohm
- RoHS
- Details
- Brand
- ROHM Semiconductor
- Width
- 1.25 mm
- Brand:
- ROHM Semiconductor
Цена по запросу
(от 18 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
820 при 50 мА, 5 В 1 NPN - Предварительно смещенный 200 МВт, 600 мА, 20 В, 500 На цифровыx транзистораx SOT-323 ROHS
Технические параметры
| RoHS | Details |
| Brand | ROHM Semiconductor |
| Width | 1.25 mm |
| Brand: | ROHM Semiconductor |
| Height | 0.8 mm |
| Length | 2 mm |
| Series | DTC614TU |
| Packaging | Reel |
| Вес, г | 0.1 |
| Manufacturer | ROHM Semiconductor |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | UMT-3 |
| Product Type: | Digital Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | UMT-3 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | DTC614TU |
| Transistor Type | 1 NPN-Pre Biased |
| Product Category | Bipolar Transistors-Pre-Biased |
| Product Category: | Digital Transistors |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 3000 |
| Collector Current (Ic) | 600mA |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 200 mW |
| Power Dissipation (Pd) | 200mW |
| Typical Input Resistor | 10 kOhms |
| DC Current Gain hFE Max | 2700 |
| Pd - Power Dissipation: | 200 mW |
| Typical Input Resistor: | 10 kOhms |
| DC Current Gain hFE Max: | 2700 |
| Peak DC Collector Current | 600 mA |
| Transition Frequency (fT) | 150MHz |
| Emitter- Base Voltage VEBO | 12 V |
| Peak DC Collector Current: | 600 mA |
| Emitter- Base Voltage VEBO: | 12 V |
| Continuous Collector Current | 600 mA |
| DC Current Gain (hFE@Ic,Vce) | 820@50mA, 5V |
| Continuous Collector Current: | 600 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 820 |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 820 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Collector- Emitter Voltage VCEO Max: | 20 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 150mV@2.5mA, 50mA |