DTC143ZET1G, Транзистор: NPN
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- Код товара
- 8017548304
- Артикул
- DTC143ZET1G
- Бренд
- ON Semiconductor***
- Case
- SC75
- PPAP
- No
- Type
- NPN
- Brand
- ON Semiconductor
Цена по запросу
(от 16,65 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans Digital BJT NPN 50 В 100 мА 300 МВт 3-контактный SOT-416 T/R
Технические параметры
| Case | SC75 |
| PPAP | No |
| Type | NPN |
| Brand | ON Semiconductor |
| Series | DTC143ZE |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Current gain | 80…200 |
| Manufacturer | ON Semiconductor |
| Polarisation | bipolar |
| Product Type | BJTs-Bipolar Transistors-Pre-Biased |
| Base resistor | 4.7kΩ |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SC-75-3 |
| Kind of package | reel, tape |
| Product Category | Bipolar Transistors-Pre-Biased |
| Supplier Package | SOT-416 |
| Collector current | 0.1A |
| Power dissipation | 0.2W |
| Kind of transistor | BRT |
| Type of transistor | NPN |
| Структура | npn |
| Transistor Polarity | NPN |
| Base-emitter resistor | 47kΩ |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 200 mW |
| Typical Input Resistor | 4.7 kOhms |
| Typical Resistor Ratio | 0.1 |
| DC Current Gain HFE Max | 80 |
| Minimum DC Current Gain | 80 5mA 10V |
| Collector-emitter voltage | 50V |
| Peak DC Collector Current | 100 mA |
| Continuous Collector Current | 0.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum DC Current Gain Range | 50 to 120 |
| Minimum Operating Temperature | -55 C |
| Typical Input Resistor (kOhm) | 4.7 |
| DC Collector/Base Gain Hfe Min | 80 |
| Maximum Power Dissipation (mW) | 300 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 1mA 10mA |