DTB113ZKT146, Транзистор: PNP
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- Код товара
- 8070159895
- Артикул
- DTB113ZKT146
- Бренд
- Rohm
- ECCN
- EAR99
- HTSUS
- 8541.21.0075
- Brand:
- ROHM Semiconductor
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 34,74 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 500 мА 200 МГц 200 МВт для поверxностного монтажа SMT3
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Brand: | ROHM Semiconductor |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Вес, г | 0.1 |
| Power - Max | 200mW |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Manufacturer: | ROHM Semiconductor |
| Mounting Type | Surface Mount |
| Package/Case: | SC-59-3 |
| Product Type: | Digital Transistors |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | DTB113ZK |
| Transistor Type | PNP - Pre-Biased |
| Product Category: | Digital Transistors |
| Simulation Models | http://rohmfs.rohm.com/en/products/library/spice/d |
| Base Product Number | DTB113 -> |
| Resistor - Base (R1) | 1 kOhms |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 500mA |
| Factory Pack Quantity: | 3000 |
| Frequency - Transition | 200MHz |
| Power Dissipation (Pd) | 200mW |
| Other Related Documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| Pd - Power Dissipation: | 200 mW |
| Supplier Device Package | SMT3 |
| Typical Input Resistor: | 1 kOhms |
| Typical Resistor Ratio: | 0.1 |
| DC Current Gain hFE Max: | 56 |
| Transition Frequency (fT) | 200MHz |
| Peak DC Collector Current: | 500 mA |
| DC Current Gain (hFE@Ic,Vce) | 56@50mA, 5V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Continuous Collector Current: | -500 mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 56 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Current - Collector Cutoff (Max) | 500nA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@50mA, 2.5mA |