Моя заявка (0)
DTB113ZKT146, Транзистор: PNP

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8048486227
Артикул
DTB113ZKT146
Бренд
Rohm
ECCN
EAR99
HTSUS
8541.21.0075
Brand:
ROHM Semiconductor
Package
Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 34,62 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 500 мА 200 МГц 200 МВт для поверxностного монтажа SMT3

Технические параметры

ECCNEAR99
HTSUS8541.21.0075
Brand:ROHM Semiconductor
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Вес, г0.1
Power - Max200mW
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:ROHM Semiconductor
Mounting TypeSurface Mount
Package/Case:SC-59-3
Product Type:Digital Transistors
Configuration:Single
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting Style:SMD/SMT
Part # Aliases:DTB113ZK
Transistor TypePNP - Pre-Biased
Product Category:Digital Transistors
Simulation Modelshttp://rohmfs.rohm.com/en/products/library/spice/d
Структураpnp
Base Product NumberDTB113 ->
Resistor - Base (R1)1 kOhms
Transistor Polarity:PNP
Collector Current (Ic)500mA
Factory Pack Quantity:3000
Frequency - Transition200MHz
Power Dissipation (Pd)200mW
Other Related Documentshttp://rohmfs.rohm.com/en/techdata_basic/transisto
Pd - Power Dissipation:200 mW
Supplier Device PackageSMT3
Typical Input Resistor:1 kOhms
Typical Resistor Ratio:0.1
DC Current Gain hFE Max:56
Transition Frequency (fT)200MHz
Peak DC Collector Current:500 mA
DC Current Gain (hFE@Ic,Vce)56@50mA, 5V
Resistor - Emitter Base (R2)10 kOhms
Continuous Collector Current:-500 mA
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)500mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hFE Min:56
Collector Cut-Off Current (Icbo)500nA
Current - Collector Cutoff (Max)500nA
Moisture Sensitivity Level (MSL)1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Collector-Emitter Breakdown Voltage (Vceo)50V
Voltage - Collector Emitter Breakdown (Max)50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@50mA, 2.5mA

Техническая документация