DST857BDJ-7, Trans GP BJT PNP 45V 0.1A 300mW 6-Pin SOT-963 T/R
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- Код товара
- 8001006845
- Артикул
- DST857BDJ-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- PNP
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 13 ₽)
Минимальный заказ: 10000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 45V 0.1A 300 МВт 6-контактный SOT-963 T/R
Технические параметры
| PPAP | No |
| Type | PNP |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DST857 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-963-6 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-963 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 100@10uA@5V|200@2mA@5V |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 470 |
| Gain Bandwidth Product fT: | 340 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 at-2 mA, -5 V |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 340(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Base Emitter Saturation Voltage (V) | 1@0.5mA@10mA|1.1@5mA@100mA |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.175@0.5mA@10mA|0.5@5mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |