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DSS4160U-7, SC703

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Код товара
8062942453
Артикул
DSS4160U-7
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Pin Count
3
Вес, г
0.03
Technology:
Si
Цена по запросу
(от 22 ₽)
Минимальный заказ: 3000 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярные транзисторы - BJT LOW VCE(SAT) NPN SMT

Технические параметры

Brand:Diodes Incorporated
Pin Count3
Вес, г0.03
Technology:Si
Package TypeSOT-323(SC-70)
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package/Case:SOT-323-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:SMD/SMT
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Transistor Polarity:NPN
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)1A
Factory Pack Quantity:3000
Power Dissipation (Pd)400mW
Minimum DC Current Gain200
Pd - Power Dissipation:400 mW
Transistor ConfigurationSingle
Maximum Power Dissipation400 mW
Transition Frequency (fT)150MHz
Gain Bandwidth Product fT:150 MHz
Emitter- Base Voltage VEBO:5 V
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)200@500mA, 5V
Maximum DC Collector Current1 A
Maximum Emitter Base Voltage5 V
Collector- Base Voltage VCBO:80 V
Maximum DC Collector Current:1 A
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage80 V
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Collector Cut-Off Current (Icbo)100nA
Maximum Collector Emitter Voltage60 V
Collector- Emitter Voltage VCEO Max:60 V
Collector-Emitter Saturation Voltage:280 mV
Collector-Emitter Breakdown Voltage (Vceo)60V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)280mV@100mA, 1A

Техническая документация