DP0150BLP4-7, 50V 450mW 200@2mA,6V 100mA PNP X2-DFN1006-3 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062518409
- Артикул
- DP0150BLP4-7
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- DP0150
- Вес, г
- 0.03
- Technology:
- Si
Цена по запросу
(от 77,66 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | DP0150 |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 1W |
| Pd - Power Dissipation: | 400 mW |
| DC Current Gain hFE Max: | 200 at 2 mA, 6 V |
| Transition Frequency (fT) | 80MHz |
| Gain Bandwidth Product fT: | 80 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA, 6V |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector- Emitter Voltage VCEO Max: | 50 V |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@100mA, 10mA |