DN350T05-7, Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 300 mW, SOT-23, Surface Mount

Name: DN350T05-7, Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 300 mW, SOT-23, Surface Mount
Brand: DIODES INC.
SKU: 8399435529

Изображения служат только для ознакомления, см. техническую документацию

Цена по запросу

(от 49 ₽)

Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand	Diodes Incorporated
Brand:	Diodes Incorporated
Series	DN350
Series:	DN350
Packaging	Cut Tape or Reel
Вес, г	0.008
Subcategory	Transistors
Technology:	Si
Manufacturer	Diodes Incorporated
Product Type	BJTs-Bipolar Transistors
Subcategory:	Transistors
Корпус	SOT-23(TO-236)
Configuration	Single
Manufacturer:	Diodes Incorporated
Product Type:	BJTs-Bipolar Transistors
Configuration:	Single
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Product Category	Bipolar Transistors-BJT
Product Category:	Bipolar Transistors-BJT
Структура	npn
Transistor Polarity	NPN
Transistor Polarity:	NPN
Factory Pack Quantity	3000
Pd - Power Dissipation	300 mW
Pd - Power Dissipation:	300 mW
Gain Bandwidth Product FT	50 MHz
Emitter- Base Voltage VEBO	5 V
Gain Bandwidth Product fT:	50 MHz
Emitter- Base Voltage VEBO:	5 V
Collector- Base Voltage VCBO	350 V
Maximum DC Collector Current	500 mA
Collector- Base Voltage VCBO:	350 V
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
DC Collector/Base Gain Hfe Min	15 at 100 mA, 10 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
DC Collector/Base Gain hfe Min:	15 at 100 mA, 10 V
Collector- Emitter Voltage VCEO Max	350 V
Collector- Emitter Voltage VCEO Max:	350 V
Collector-Emitter Saturation Voltage	1 V
Collector-Emitter Saturation Voltage:	1 V
Factory Pack Quantity: Factory Pack Quantity:	3000