DN2540N3-G-P003, MOSFETs N-Channel MOSFET 400V 0.12A 3P TO-92
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- Код товара
- 8006267034
- Артикул
- DN2540N3-G-P003
- Бренд
- Microchip Technology
- Brand:
- Microchip Technology
- FET Type
- N-Channel, Depletion Mode
- Product:
- MOSFET Small Signals
- Vgs (Max)
- ±20V
Цена по запросу
(от 164 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный, режим разрядки 400 В 120 мА (Tj) 1 Вт (Tc) Через отверстие TO-92 (TO-226)
Технические параметры
| Brand: | Microchip Technology |
| FET Type | N-Channel, Depletion Mode |
| Product: | MOSFET Small Signals |
| Vgs (Max) | ±20V |
| Fall Time: | 20 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 15 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.45 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Depletion |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Package/Case: | TO-92-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | TO-226-3, TO-92-3(TO-226AA) |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 2000 |
| Rds On (Max) @ Id, Vgs | 25Ohm @ 120mA, 0V |
| Особенности | высоковольтный |
| Pd - Power Dissipation: | 1 W |
| Power Dissipation (Max) | 1W(Tc) |
| Supplier Device Package | TO-92(TO-226) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Drain to Source Voltage (Vdss) | 400 V |
| Id - Continuous Drain Current: | 120 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 25 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Current - Continuous Drain (Id) @ 25°C | 120mA(Tj) |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Пороговое напряжение на затворе | 3 |
| Максимальное напряжение сток-исток Uси,В | 400 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |