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DN2530N8-G, Транзистор: N-MOSFET

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Код товара
8046477579
Артикул
DN2530N8-G
Бренд
Microchip Technology
Type:
FET
Brand:
Microchip Technology
Military
No
Product:
MOSFET Small Signals
Цена по запросу
(от 3 820 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

3 SOT-89 T/RMOSFET, РЕЖИМ РАЗРЯДКИ, 300 В, 12 Ом | Microchip Technology Inc. DN2530N8-G

Технические параметры

Type:FET
Brand:Microchip Technology
MilitaryNo
Product:MOSFET Small Signals
PackagingTape and Reel
Pin Count4
AutomotiveNo
Fall Time:20 ns
Rise Time:15 ns
Вес, г1
Technology:Si
Channel ModeDepletion
Channel TypeN
Subcategory:MOSFETs
Channel Mode:Depletion
ConfigurationSingle
Manufacturer:Microchip
Product Type:MOSFET
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Supplier PackageSOT-89
Transistor Type:1 N-Channel
Product Category:MOSFET
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Pd - Power Dissipation:1.6 W
Vgs - Gate-Source Voltage:-20 V, +20 V
Number of Elements per Chip1
Typical Turn-On Delay Time:10 ns
Typical Turn-Off Delay Time:15 ns
Operating Temperature - (??C)-55~150
Id - Continuous Drain Current:200 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Forward Transconductance - Min:300 mS
Maximum Power Dissipation - (mW)1600
Maximum Gate Source Voltage - (V)??20
Rds On - Drain-Source Resistance:12 Ohms
Maximum Drain Source Voltage - (V)300
Vds - Drain-Source Breakdown Voltage:300 V
Maximum Continuous Drain Current - (A)0.2
Typical Input Capacitance @ Vds - (pF)300(Max)@25V
Vgs th - Gate-Source Threshold Voltage:3.5 V
Maximum Drain Source Resistance - (mOhm)12000@0V
Factory Pack Quantity: Factory Pack Quantity:2000

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