DN2530N8-G, MOSFETs 300V 12Ohm
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004628617
- Артикул
- DN2530N8-G
- Бренд
- Microchip Technology
- Type:
- FET
- Brand:
- Microchip Technology
- Military
- No
- Product:
- MOSFET Small Signals
Цена по запросу
(от 136 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
3 SOT-89 T/RMOSFET, РЕЖИМ РАЗРЯДКИ, 300 В, 12 Ом | Microchip Technology Inc. DN2530N8-G
Технические параметры
| Type: | FET |
| Brand: | Microchip Technology |
| Military | No |
| Product: | MOSFET Small Signals |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Fall Time: | 20 ns |
| Rise Time: | 15 ns |
| Вес, г | 0.05 |
| Technology: | Si |
| Channel Mode | Depletion |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Depletion |
| Configuration | Single |
| Manufacturer: | Microchip |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Supplier Package | SOT-89 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 1.6 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Operating Temperature - (??C) | -55~150 |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 300 mS |
| Maximum Power Dissipation - (mW) | 1600 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 12 Ohms |
| Maximum Drain Source Voltage - (V) | 300 |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Maximum Continuous Drain Current - (A) | 0.2 |
| Typical Input Capacitance @ Vds - (pF) | 300(Max)@25V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Maximum Drain Source Resistance - (mOhm) | 12000@0V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Максимальное напряжение сток-исток Uси,В | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 12Ом |