DMTH10H003SPSW-13, 100V 166A 3mOhm@30A,10V 2.2V@30A 1 N-channel MOSFETs ROHS
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- Код товара
- 8070070685
- Артикул
- DMTH10H003SPSW-13
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Product:
- MOSFETs
- Вес, г
- 1
- No. of Pins
- 8Pins
Цена по запросу
(от 410,82 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Product: | MOSFETs |
| Вес, г | 1 |
| No. of Pins | 8Pins |
| Technology: | Si |
| Channel Type | N Channel |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFETs |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 85 nC |
| Number of Channels: | 1 Channel |
| Transistor Mounting | Surface Mount |
| Transistor Polarity: | N-Channel |
| Transistor Case Style | PowerDI 5060 |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 2.6 W |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Continuous Drain Current Id | 166A |
| Id - Continuous Drain Current: | 166 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Gate Source Threshold Voltage Max | 2.6V |
| Rds On - Drain-Source Resistance: | 3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |