DMT3020LFDB-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8075489577
- Артикул
- DMT3020LFDB-7
- Бренд
- DIODES INC.
- Type
- 2 N-Channel
- Brand:
- Diodes Incorporated
- Fall Time:
- 2.4 ns, 2.4 ns
- Rise Time:
- 1.9 ns, 1.9 ns
Цена по запросу
(от 134 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 7,7 А 20 Мом при 10 В, 9 А 700 МВт 3 В при 250 мкА 2 N-канальныx МОП-транзистора UDFN2020-6 ROHS
Технические параметры
| Type | 2 N-Channel |
| Brand: | Diodes Incorporated |
| Fall Time: | 2.4 ns, 2.4 ns |
| Rise Time: | 1.9 ns, 1.9 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-2020-6 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 700mW |
| Pd - Power Dissipation: | 1.8 W |
| Total Gate Charge (Qg@Vgs) | 7nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 1.8 ns, 1.8 ns |
| Input Capacitance (Ciss@Vds) | 393pF@15V |
| Typical Turn-Off Delay Time: | 7.5 ns, 7.5 ns |
| Continuous Drain Current (Id) | 7.7A |
| Id - Continuous Drain Current: | 7.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 20 mOhms, 20 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |