DMT10H015LK3-13, 100V 50A 2.9W 15mOhm@20A,10V 3.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062454453
- Артикул
- DMT10H015LK3-13
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 110 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.53 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.1 |
| Package Height | 2.29 |
| Package Length | 6.58 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8.1 |
| Typical Rise Time (ns) | 7 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2900 |
| Typical Gate Charge @ 10V (nC) | 33.3 |
| Typical Gate Charge @ Vgs (nC) | 33.3@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.5 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 19.7 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 52.7 |
| Typical Input Capacitance @ Vds (pF) | 1871@50V |
| Maximum Drain Source Resistance (MOhm) | 15@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |