DMS2085LSD-13, MOSFETs P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006346470
- Артикул
- DMS2085LSD-13
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 49,38 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Вес, кг | 4.05 |
| Configuration | Single Dual Drain |
| Package Width | 3.9 |
| Package Height | 1.45 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Структура | MOSFET |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 6.8 |
| Typical Rise Time (ns) | 3 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1800 |
| Typical Gate Charge @ 10V (nC) | 7.8 |
| Typical Gate Charge @ Vgs (nC) | 3.7@4.5V|7.8@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.3 |
| Typical Input Capacitance @ Vds (pF) | 353@15V |
| Maximum Drain Source Resistance (mOhm) | 85@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |