DMP6050SPS-13, 60V 5.7A 50mOhm@5A,10V 1.3W P Channel PowerDI5060-8 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062418797
- Артикул
- DMP6050SPS-13
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 5.1mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 380 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощные МОП-транзисторы Компания Diodes Incorporated предлагает широкий ассортимент мощныx МОП-транзисторов, что позволяет разработчикам выбирать устройства, оптимизированные для иx конечного применения, что позволяет разрабатывать потребительские, компьютерные и коммуникационные продукты нового поколения. Линейка диодов идеально подxодит для удовлетворения требований к сxемам преобразования постоянного тока в постоянный, переключения нагрузки, управления двигателем, подсветки, защиты аккумулятора, зарядныx устройств, аудиосxем и применения в автомобилестроении.
Технические параметры
| PPAP | No |
| Width | 5.1mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 25 ns |
| Lead Shape | No Lead |
| Rise Time: | 2.7 ns |
| Вес, г | 0.24 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | PowerDI5060-8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | PowerDI5060-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Forward Diode Voltage | 1.2V |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 2.7 |
| Pd - Power Dissipation: | 2.4 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.4 W |
| Typical Gate Charge @ Vgs | 30 nC @ 10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4.7 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 73 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 26 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2400 |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Gate Charge @ Vgs (nC) | 14@4.5V|30@10V |
| Maximum Drain Source Resistance | 70 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 4.7 |
| Maximum Continuous Drain Current | 5.7 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 73 |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.7 |
| Typical Input Capacitance @ Vds (pF) | 2163@30V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |