DMP4051LK3-13, Транзистор P-MOSFET, полевой, -40В, -8,4А, 8,9Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070078297
- Артикул
- DMP4051LK3-13
- Бренд
- DIODES INC.
- Type:
- Enhancement Mode MOSFET
- Width
- 6.2mm
- Brand:
- Diodes Incorporated
- Series:
- DMP4051
Цена по запросу
(от 95,23 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -40В, -8,4А, 8,9Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Type: | Enhancement Mode MOSFET |
| Width | 6.2mm |
| Brand: | Diodes Incorporated |
| Series: | DMP4051 |
| Product: | MOSFET Small Signal |
| Pin Count | 3 |
| Fall Time: | 14.3 ns |
| Rise Time: | 14.1 ns |
| Вес, г | 0.4 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 8.9 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 8.9 W |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Vgs - Gate-Source Voltage | 3V @ 250uA |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 2.3 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 25.1 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 10.5 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 16.6 S |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Continuous Drain Current | 10.5 A |
| Rds On - Drain-Source Resistance | 51mО© @ 12A,10V |
| Rds On - Drain-Source Resistance: | 51 mOhms |
| Power Dissipation-Max (Ta=25В°C) | 2.14W |
| Vds - Drain-Source Breakdown Voltage | 40V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Continuous Drain Current (Id) @ 25В°C | 7.2A |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |