DMP4025LSD-13, Trans MOSFET P-CH 40V 6.9A 8-Pin SO T/R
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- Код товара
- 8052886971
- Артикул
- DMP4025LSD-13
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 3.95mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 85 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 40V 7.6A с 8-контактным разъемом SO T/R
Технические параметры
| PPAP | No |
| Width | 3.95mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMP4025 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 30.9 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 14.7 ns |
| Вес, г | 1.81 |
| PCB changed | 8 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Transistor Type: | 2 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 33.7 nC |
| Структура | MOSFET |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 30.9 |
| Typical Rise Time (ns) | 14.7 |
| Особенности | - |
| Pd - Power Dissipation: | 1.25 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 2.14 W |
| Typical Gate Charge @ Vgs | 33.7 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 6.9 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 53.7 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7.6 A |
| Maximum Gate Threshold Voltage | 1.8V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2140 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 33.7 |
| Typical Gate Charge @ Vgs (nC) | 33.7@10V|14@4.5V |
| Forward Transconductance - Min: | 16.6 S |
| Maximum Drain Source Resistance | 45 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 179 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Gate Plateau Voltage (V) | 4.2 |
| Typical Turn-Off Delay Time (ns) | 53.7 |
| Maximum Diode Forward Voltage (V) | 1 |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Gate to Drain Charge (nC) | 7.3 |
| Maximum Gate Threshold Voltage (V) | 1.8 |
| Minimum Gate Threshold Voltage (V) | 0.8 |
| Typical Gate Threshold Voltage (V) | 1.3 |
| Typical Gate to Source Charge (nC) | 5.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1640@20V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 25@10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 28 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.8 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 128@20V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.9 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 100 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6.9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |