DMP4025LK3-13, Trans MOSFET P-CH 40V 8.6A 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001050393
- Артикул
- DMP4025LK3-13
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- No
- Width
- 6.2mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 74 ₽)
Минимальный заказ: 494 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 40V 6.7A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 6.2mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant with Exemption |
| Series: | DMP40 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 30.9 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 14.7 ns |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | DPAK(TO-252) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 33.7 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 30.9 |
| Typical Rise Time (ns) | 14.7 |
| Особенности | - |
| Pd - Power Dissipation: | 1.7 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.78 W |
| Typical Gate Charge @ Vgs | 33.7 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6.9 ns |
| Maximum Drain Source Voltage | 40 V |
| Typical Turn-Off Delay Time: | 53.7 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 8.6 A |
| Maximum Gate Threshold Voltage | 1.8V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2780 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 33.7 |
| Typical Gate Charge @ Vgs (nC) | 33.7@10V|14@4.5V |
| Forward Transconductance - Min: | 16.6 S |
| Maximum Drain Source Resistance | 45 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Maximum Continuous Drain Current | 8.6 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 53.7 |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Maximum Gate Threshold Voltage (V) | 1.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.7 |
| Typical Input Capacitance @ Vds (pF) | 1643@20V |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 25@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 8.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |