DMP22D6UT-7, Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001230336
- Артикул
- DMP22D6UT-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Series:
- DMP22
Цена по запросу
(от 20 ₽)
Минимальный заказ: 1600 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 0,43A 3-контактный SOT-523 T/R
Технические параметры
| PPAP | No |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMP22 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Product Category | Small Signal |
| Supplier Package | SOT-523 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Особенности | - |
| Pd - Power Dissipation: | 150 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 430 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature: | -55 C |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance: | 700 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.43 |
| Typical Input Capacitance @ Vds (pF) | 175(Max)16V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 1100 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.43 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±10В |