DMP21D0UT-7, Trans MOSFET P-CH 20V 0.65A 3-Pin SOT-523 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001273068
- Артикул
- DMP21D0UT-7
- Бренд
- DIODES INC.
- HTS
- 8541.21.00.95
- ECCN
- EAR99
- Type
- P Channel
- HTSUS
- 8541.21.0095
Цена по запросу
(от 19 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канал 20 В 590 мА (Ta) 240 МВт (Ta) для поверxностного монтажа SOT-523
Технические параметры
| HTS | 8541.21.00.95 |
| ECCN | EAR99 |
| Type | P Channel |
| HTSUS | 8541.21.0095 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | DMP21 |
| FET Type | P-Channel |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | В±8V |
| Automotive | Yes |
| Fall Time: | 18.5 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 8 ns |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 0.8 |
| Package/Case: | SOT-523-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SOT-523 |
| Package Height | 0.75 |
| Package Length | 1.6 |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | SOT-523 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.5 nC |
| Vgs(th) (Max) @ Id | 700mV @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | DMP21 -> |
| Number of Channels: | 1 Channel |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 240mW |
| Rds On (Max) @ Id, Vgs | 495mOhm @ 400mA, 4.5V |
| Typical Fall Time (ns) | 18.5 |
| Typical Rise Time (ns) | 8 |
| Особенности | - |
| Pd - Power Dissipation: | 240 mW |
| Power Dissipation (Max) | 240mW (Ta) |
| Supplier Device Package | SOT-523 |
| Total Gate Charge (Qg@Vgs) | 1.54nC@8V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.1 ns |
| Gate Charge (Qg) (Max) @ Vgs | 1.54nC @ 8V |
| Input Capacitance (Ciss@Vds) | 80pF@10V |
| Typical Turn-Off Delay Time: | 31.7 ns |
| Continuous Drain Current (Id) | 590mA |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 590 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 330 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 1@4.5V|1.5@8V |
| Forward Transconductance - Min: | 50 mS |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 7.1 |
| Maximum Drain Source Voltage (V) | 20 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Typical Turn-Off Delay Time (ns) | 31.7 |
| Rds On - Drain-Source Resistance: | 495 mOhms |
| Maximum Gate Threshold Voltage (V) | 0.7(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Maximum Continuous Drain Current (A) | 0.65 |
| Typical Input Capacitance @ Vds (pF) | 76.5@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Maximum Drain Source Resistance (mOhm) | 495@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Current - Continuous Drain (Id) @ 25В°C | 590mA (Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.65 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.24 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±10В |