DMP2130L-7, Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001166165
- Артикул
- DMP2130L-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand
- Diodes Incorporated
- Width
- 1.3 mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 19 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 3A 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Brand | Diodes Incorporated |
| Width | 1.3 mm |
| Brand: | Diodes Incorporated |
| Height | 1 mm |
| Length | 2.9 mm |
| Series | DMP2130 |
| EU RoHS | Compliant |
| Product | MOSFET Small Signal |
| Series: | DMP2130 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Fall Time | 20 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 20 ns |
| Automotive | No |
| Fall Time: | 20 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 20 ns |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | MOSFETs |
| Technology: | Si |
| Unit Weight | 0.000282 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Diodes Incorporated |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | 1 P-Channel |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.3 nC |
| Number Of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 1.4 W |
| Typical Fall Time (ns) | 41 |
| Typical Rise Time (ns) | 20 |
| Особенности | - |
| Pd - Power Dissipation: | 1.4 W |
| Vgs - Gate-Source Voltage | 12 V |
| Typical Turn-On Delay Time | 12 ns |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Typical Turn-Off Delay Time: | 38 ns |
| Id - Continuous Drain Current | 3 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 7.3@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance | 75 mOhms |
| Typical Turn-Off Delay Time (ns) | 38 |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Typical Input Capacitance @ Vds (pF) | 443@16V |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 75@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1.25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±10В |