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DMP2004K-7, Транзистор P-MOSFET, полевой, -20В, -0,6А, 550мВт, SOT23

DMP2004K-7, Транзистор P-MOSFET, полевой, -20В, -0,6А, 550мВт, SOT23

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Код товара
8073836699
Артикул
DMP2004K-7
Бренд
DIODES INC.
HTS
8541.29.00.95
ECCN
EAR99
HTSUS
8541.21.0095
Brand:
Diodes Incorporated
Цена по запросу
(от 22,13 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

P-канал 20 В 600 мА (Ta) 550 МВт (Ta) для поверxностного монтажа SOT-23-3

Технические параметры

HTS8541.29.00.95
ECCNEAR99
HTSUS8541.21.0095
Brand:Diodes Incorporated
EU RoHSCompliant
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Series:DMP2004
FET TypeP-Channel
MilitaryNo
MountingSurface Mount
Product:MOSFET Small Signal
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
Vgs (Max)В±8V
AutomotiveYes
Fall Time:19.2 ns
Lead ShapeGull-wing
Rise Time:4.3 ns
TechnologyMOSFET (Metal Oxide)
Вес, г0.02
PCB changed3
Part StatusActive
RoHS StatusROHS3 Compliant
Technology:Si
Channel ModeEnhancement
Channel TypeP
REACH StatusREACH Unaffected
Subcategory:MOSFETs
Channel Mode:Enhancement
ConfigurationSingle
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package Width1.3
Product Type:MOSFET
Configuration:Single
Package / CaseTO-236-3, SC-59, SOT-23-3
Package Height0.98
Package Length2.9
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Product CategoryPower MOSFET
Supplier PackageSOT-23
Transistor Type:1 P-Channel
Maximum IDSS (uA)1
Product Category:MOSFET
Vgs(th) (Max) @ Id1V @ 250ВµA
Base Product NumberDMP2004 ->
Number of Channels:1 Channel
AEC Qualified NumberAEC-Q101
Transistor Polarity:P-Channel
Operating Temperature-55В°C ~ 150В°C (TJ)
Standard Package NameSOT-23
Rds On (Max) @ Id, Vgs900mOhm @ 430mA, 4.5V
Typical Fall Time (ns)19.2
Typical Rise Time (ns)4.3
Pd - Power Dissipation:550 mW
Power Dissipation (Max)550mW (Ta)
Supplier Device PackageSOT-23-3
Supplier Temperature GradeAutomotive
Vgs - Gate-Source Voltage:-8 V, +8 V
Number of Elements per Chip1
Typical Turn-On Delay Time:8.5 ns
Typical Turn-Off Delay Time:20.2 ns
Drain to Source Voltage (Vdss)20V
Id - Continuous Drain Current:600 mA
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)550
Minimum Operating Temperature:-55 C
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)8.5
Maximum Drain Source Voltage (V)20
Moisture Sensitivity Level (MSL)1 (Unlimited)
Typical Turn-Off Delay Time (ns)20.2
Rds On - Drain-Source Resistance:900 mOhms
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Input Capacitance (Ciss) (Max) @ Vds175pF @ 16V
Maximum Continuous Drain Current (A)0.6
Typical Input Capacitance @ Vds (pF)175(Max)@16V
Vds - Drain-Source Breakdown Voltage:20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Maximum Drain Source Resistance (mOhm)900@4.5V
Vgs th - Gate-Source Threshold Voltage:500 mV
Maximum Gate Source Leakage Current (nA)1000
Current - Continuous Drain (Id) @ 25В°C600mA (Ta)
Factory Pack Quantity: Factory Pack Quantity:3000

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