DMNH6042SSDQ-13, Trans MOSFET N-CH 60V 5.3A 8-Pin SO T/R Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8013827057
- Артикул
- DMNH6042SSDQ-13
- Бренд
- DIODES INC.
- PPAP
- Yes
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 100 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 5.3A Автомобильный AEC-Q101 с 8-контактным разъемом SO T/R
Технические параметры
| PPAP | Yes |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.8 nC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 4.5 |
| Typical Rise Time (ns) | 1.9 |
| Особенности | автомобильные приложения |
| Pd - Power Dissipation: | 2.1 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Id - Continuous Drain Current: | 16.7 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Power Dissipation (mW) | 2100 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 8.8 |
| Typical Gate Charge @ Vgs (nC) | 4.2@4.5V|8.8@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.4 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 10.1 |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.3 |
| Typical Input Capacitance @ Vds (pF) | 584@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |