DMNH6021SK3Q-13, Транзистор: N-MOSFET
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- Код товара
- 8070085994
- Артикул
- DMNH6021SK3Q-13
- Бренд
- DIODES INC.
- Type
- N Channel
- Brand:
- Diodes Incorporated
- Вес, г
- 0.38
- Technology:
- Si
Цена по запросу
(от 138,38 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 50 А 2,1 Вт 23 Мом при 10 В, 12 А 3 В при 250uA N-канальные МОП-транзисторы TO-252 ROHS
Технические параметры
| Type | N Channel |
| Brand: | Diodes Incorporated |
| Вес, г | 0.38 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | DPAK-3(TO-252-3) |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Factory Pack Quantity: | 2500 |
| Power Dissipation (Pd) | 2.1W |
| Pd - Power Dissipation: | 3.7 W |
| Total Gate Charge (Qg@Vgs) | 20.1nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Input Capacitance (Ciss@Vds) | 1.143nF@25V |
| Continuous Drain Current (Id) | 50A |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |