DMNH6008SCTQ, Transistor: N-MOSFET; unipolar
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061714316
- Артикул
- DMNH6008SCTQ
- Бренд
- DIODES INC.
- Tab
- Tab
- PPAP
- Yes
- SVHC
- Yes
- Mounting
- Through Hole
Цена по запросу
(от 450 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 130A с 3-контактным разъемом (3 + вкладки) TO-220AB Tube Автомобильный AEC-Q101
Технические параметры
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.82(Max)mm |
| Package Length | 10.66(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 3.4 |
| Typical Rise Time (ns) | 5 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 210000 |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Gate Charge @ Vgs (nC) | 21@4.5V|40@10V |
| Maximum Gate-Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 5.7 |
| Maximum Drain-Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 15.6 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 130 |
| Typical Input Capacitance @ Vds (pF) | 2596@30V |
| Maximum Drain-Source Resistance (mOhm) | 8@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |