DMNH4006SPSQ-13, Trans MOSFET N-CH 40V 110A Automotive AEC-Q101 8-Pin PowerDI EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8037968726
- Артикул
- DMNH4006SPSQ-13
- Бренд
- DIODES INC.
- PPAP
- Yes
- SVHC
- Yes
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 150 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.8 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Maximum IDSS (uA) | 1 |
| Структура | N-Channel |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8.1 |
| Typical Rise Time (ns) | 9.3 |
| Особенности | автомобильные приложения |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 50.9 |
| Typical Gate Charge @ Vgs (nC) | 50.9@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 7.7 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 18.1 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 110 |
| Typical Input Capacitance @ Vds (pF) | 2280@25V |
| Maximum Drain Source Resistance (mOhm) | 7@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 110 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |