DMNH10H028SCT, Транзистор: N-MOSFET; 100В; 42А; Idm: 90А; 2,8Вт; TO220AB
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- Код товара
- 8049706398
- Артикул
- DMNH10H028SCT
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Packaging:
- Tube
- Вес, г
- 2
- Technology:
- Si
Цена по запросу
(от 232,34 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Packaging: | Tube |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFET |
| Mounting Style: | Through Hole |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 31.9 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 2.8 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |