DMN67D8L-7, Транзистор: N-MOSFET; полевой
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017546549
- Артикул
- DMN67D8L-7
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Series
- DMN67
- Fall Time
- 5.6 ns
- Packaging
- Cut Tape or Reel
Цена по запросу
(от 23,60 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой
Технические параметры
| Brand | Diodes Incorporated |
| Series | DMN67 |
| Fall Time | 5.6 ns |
| Packaging | Cut Tape or Reel |
| Rise Time | 3 ns |
| Technology | Si |
| Вес, г | 0.02 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Manufacturer | Diodes Incorporated |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 821 pC |
| Number Of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 340 mW |
| Vgs - Gate-Source Voltage | 30 V |
| Typical Turn-On Delay Time | 2.8 ns |
| Typical Turn-Off Delay Time | 7.6 ns |
| Id - Continuous Drain Current | 210 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 80 mS |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |