DMN65D8LDW-7, Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001338568
- Артикул
- DMN65D8LDW-7
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.35mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 7 ₽)
Минимальный заказ: 4400 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 60V 0,2A 6-контактный SOT-363 T/R
Технические параметры
| PPAP | No |
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN63 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 6.3 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 3.2 ns |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-363 |
| Subcategory: | MOSFETs |
| Корпус | SOT-363 |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Product Category | Small Signal |
| Supplier Package | SOT-363 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 870 pC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 6.3 |
| Typical Rise Time (ns) | 3.2 |
| Особенности | - |
| Pd - Power Dissipation: | 400 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 400 mW |
| Typical Gate Charge @ Vgs | 0.87 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 3.3 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 12 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 200 mA |
| Maximum Gate Threshold Voltage | 20V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 0.87 |
| Typical Gate Charge @ Vgs (nC) | 0.87@10V|0.43@4.5V |
| Forward Transconductance - Min: | 80 mS |
| Maximum Drain Source Resistance | 8 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Rds On - Drain-Source Resistance: | 6 Ohms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.2 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |