DMN61D8LVTQ-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8072606025
- Артикул
- DMN61D8LVTQ-7
- Бренд
- DIODES INC.
- Type
- 2 N-Channel
- Brand:
- Diodes Incorporated
- Fall Time:
- 440 ns
- Rise Time:
- 301 ns
Цена по запросу
(от 83,61 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 630 мА 1.8Ohm@150mA,5 В 820 МВт 2 В при 1 мА 2 N-канальныx МОП-транзистора TSOT-26, соответствующие требованиям ROHS
Технические параметры
| Type | 2 N-Channel |
| Brand: | Diodes Incorporated |
| Fall Time: | 440 ns |
| Rise Time: | 301 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | TSOT-26-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 740 pC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 820mW |
| Pd - Power Dissipation: | 1.09 W |
| Total Gate Charge (Qg@Vgs) | 740pC@5V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 131 ns |
| Input Capacitance (Ciss@Vds) | 12.9pF@12V |
| Typical Turn-Off Delay Time: | 582 ns |
| Continuous Drain Current (Id) | 630mA |
| Id - Continuous Drain Current: | 630 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 80 mS |
| Rds On - Drain-Source Resistance: | 1.1 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |