DMN601WK-7, Транзистор N-MOSFET, полевой, 60В, 0,3А, 0,2Вт, SOT323
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- Код товара
- 8017543676
- Артикул
- DMN601WK-7
- Бренд
- DIODES INC.
- ECCN
- EAR99
- Brand
- Diodes Incorporated
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
Цена по запросу
(от 14,97 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор, от 40 В до 90 В, диоды вкл.
Технические параметры
| ECCN | EAR99 |
| Brand | Diodes Incorporated |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| Series | DMN60 |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Product | MOSFET Small Signal |
| FET Type | N-Channel |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Vgs (Max) | В±20V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.1 |
| RoHS Status | ROHS3 Compliant |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-323 |
| Product Type | MOSFET |
| REACH Status | REACH Unaffected |
| Корпус | SOT323 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70, SOT-323 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Number Of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Структура | MOSFET |
| Base Product Number | DMN601 -> |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Pd - Power Dissipation | 200 mW |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Особенности | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Supplier Device Package | SOT-323 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 200 mW |
| Vgs - Gate-Source Voltage | 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60 V |
| Id - Continuous Drain Current | 300 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Drain to Source Voltage (Vdss) | 60V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Continuous Drain Current | 300 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 2 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 300mA (Ta) |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |