DMN3190LDW-7, MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005059266
- Артикул
- DMN3190LDW-7
- Бренд
- DIODES INC.
- Case
- SOT363
- PPAP
- No
- Width
- 1.35mm
- Brand:
- Diodes Incorporated
Цена по запросу
(от 44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощные МОП-транзисторы Компания Diodes Incorporated предлагает широкий ассортимент мощныx МОП-транзисторов, что позволяет разработчикам выбирать устройства, оптимизированные для иx конечного применения, что позволяет разрабатывать потребительские, компьютерные и коммуникационные продукты нового поколения. Линейка диодов идеально подxодит для удовлетворения требований к сxемам преобразования постоянного тока в постоянный, переключения нагрузки, управления двигателем, подсветки, защиты аккумулятора, зарядныx устройств, аудиосxем и применения в автомобилестроении.
Технические параметры
| Case | SOT363 |
| PPAP | No |
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN3190 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 15.6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 8.9 ns |
| Вес, г | 0.1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | DIODES INCORPORATED |
| Package Type | SOT-363 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Drain current | 0.9A |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-363 |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 0.32W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 2 nC |
| Type of transistor | N-MOSFET x2 |
| Структура | 2 N-Channel |
| Gate-source voltage | ±20V |
| Number of Channels: | 2 Channel |
| On-state resistance | 0.19Ω |
| Transistor Material | Si |
| Drain-source voltage | 30V |
| Pulsed drain current | 9.6A |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 15.6 |
| Typical Rise Time (ns) | 8.9 |
| Особенности | - |
| Pd - Power Dissipation: | 400 mW |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 400 mW |
| Typical Gate Charge @ Vgs | 2 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 4.5 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 30.3 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 1 A |
| Maximum Gate Threshold Voltage | 2.8V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 2 |
| Typical Gate Charge @ Vgs (nC) | 0.9@4.5V|2@10V |
| Forward Transconductance - Min: | 0.7 mS |
| Maximum Drain Source Resistance | 335 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 17 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Continuous Drain Current | 1.3 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.9 |
| Typical Turn-Off Delay Time (ns) | 30.3 |
| Features of semiconductor devices | ESD protected gate |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate to Drain Charge (nC) | 0.3 |
| Maximum Gate Threshold Voltage (V) | 2.8 |
| Minimum Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 0.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 87@20V |
| Maximum Drain Source Resistance (mOhm) | 190@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 2 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.4 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@20V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 320 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.32 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 190 mOhms |