DMN3110S-7, Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001170439
- Артикул
- DMN3110S-7
- Бренд
- DIODES INC.
- Type
- 1PCSNChannel
- Brand
- Diodes Incorporated
- Width
- 1.4mm
- Series
- DMN31
Цена по запросу
(от 44 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type | 1PCSNChannel |
| Brand | Diodes Incorporated |
| Width | 1.4mm |
| Series | DMN31 |
| Fall Time | 2.5 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Rise Time | 4.6 ns |
| Technology | Si |
| Вес, г | 1 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | MOSFET |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 8.6 nC |
| Number Of Channels | 1 Channel |
| Структура | N-Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 740 mW |
| Power Dissipation (Pd) | 740mW |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V |
| Vgs - Gate-Source Voltage | 20 V |
| Total Gate Charge (Qg@Vgs) | 8.6nC@10V |
| Typical Turn-On Delay Time | 2.6 ns |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 13.1 ns |
| Input Capacitance (Ciss@Vds) | 305.8pF@15V |
| Maximum Drain Source Voltage | 30 V |
| Continuous Drain Current (Id) | 2.5A |
| Id - Continuous Drain Current | 3.3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 4.8 mS |
| Maximum Gate Threshold Voltage | 2.3V |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Continuous Drain Current | 3.8 A |
| Rds On - Drain-Source Resistance | 73 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |